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H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form
2.54 7.0 6.0 1.2 7.62 1 2 3
Dimensions in mm 6 5 4 7.62
6.62 4.0 DESCRIPTION 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor to 0.26 3.35 0.5 optimise switching speed and elevated temperature characteristics in a standard 6pin ABSOLUTE MAXIMUM RATINGS dual in line plastic package. (25C unless otherwise specified)
13 Max
FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100nA max. at 80V VCE l Low input current 1mA IF
l
Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Peak Forward Current (1s pulse, 300pps) Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO H11G3, H11G2, H11G1 Collector-base Voltage BVCBO H11G3, H11G2, H11G1 Emitter-baseVoltage BVECO Power Dissipation POWER DISSIPATION 55, 80, 100V 55, 80, 100V 6V 200mW 60mA 3A 3V 100mW
APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances
OPTION SM
SURFACE MOUNT OPTION G
7.62
0.6 0.1 10.46 9.86
1.25 0.75
0.26
Total Power Dissipation
10.16
260mW
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com
7/12/00
DB92008m-AAS/a1
ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO ) H11G1 H11G2 H11G3 Collector-base Breakdown (BVCBO ) H11G1 H11G2 H11G3 Emitter-base Breakdown (BVEBO ) Collector-emitter Dark Current (ICEO ) H11G1 H11G2 H11G3 Collector Output Current ( IC ) H11G1, H11G2 H11G1, H11G2 H11G3 Collector-emitter Saturation Voltage VCE(SAT) H11G1, H11G2 H11G1, H11G2 H11G3 Input to Output Isolation Voltage VISO Input-output Isolation Resistance Input-output Capacitance Turn-on Time Turn-off Time RISO Cf ton toff MIN TYP MAX UNITS 1.2 3 10 1.5 V V A V V V V V V V 100 100 100 nA nA nA TEST CONDITION IF = 10mA IR = 10A VR = 6V IC = 1mA IC = 1mA IC = 1mA IC = IC = IC = IE = 100A 100A 100A 0.1mA
Output
100 80 55 100 80 55 6
VCE = 80V VCE = 60V VCE = 30V 10mA IF , 1.2V VCE 1mA IF , 5V VCE 1mA IF , 5V VCE 1mA IF , 1mA IC 16mA IF , 50mA IC 20mA IF , 50mA IC See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz IF= 10mA, VCC = 5V, RL = 100, f = 30Hz, pulse width equal to or less than 300s
Coupled
100 5 2 1.0 1.2 1.2 5300 7500 1011 0.5 5 100
mA mA mA V V V VRMS VPK pF s s
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
FIGURE 1 VCC Input IF = 10mA 100 tr Input Output Output 10% 90% 10% 90% tf ton toff
7/12/00
DB92008m-AAS/a1
Collector Power Dissipation vs. Ambient Temperature 250 Collector power dissipation P C (mW) 200 100
Normalized Output Current vs. Collector-emitter Voltage
50mA Normalized output current 10 10mA 1.0 IF = 1mA 0.1 Normalized to IF = 1mA (300s pulse), VCE = 5V 0 1 2 3 4 5 6
150
100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 80 70
0.01 Collector-emitter voltage VCE ( V ) Normalized Output Current vs. Ambient Temperature 100 50mA Normalized output current 10 10mA 1.0 IF = 1mA 0.1 Normalized to IF = 1mA (300s pulse), VCE = 5V TA = 25 C -50 -25 0 25 50 75 Ambient temperature TA ( C ) Collector Dark Current vs. Ambient Temperature 100k (nA) VCE = 80V 10k 100
Forward current I F (mA)
60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Normalized Output Current vs. Input Current 100
0.01
Normalized output current
10
Collector dark current I
CEO
1k
1.0 Normalized to IF = 1mA (300s pulse), VCE = 5V TA = 25 C 0.1 1.0 10 100
50V VCE
100
0.1
10 1 -30 0 25 50
VCE = 10V 75 100
0.01
Input current IF (mA)
7/12/00
Ambient temperature TA ( C )
DB92008m-AAS/a1

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